Miembros del grupo

Director/es
SAN ANDRES SERRANO, ENRIQUE
Miembros
CAUDEVILLA GUTIERREZ, DANIEL
GARCIA HEMME, ERIC
GARCIA HERNANSANZ, RODRIGO
GONZALEZ DIAZ, GERMAN
LUCIA MULAS, MARIA LUISA
MARTIL DE LA PLAZA, IGNACIO
OLEA ARIZA, JAVIER
PASTOR PASTOR, DAVID
PRADO MILLAN, ALVARO DEL

Proyectos (IP)

Título	Organismo	Referencia	Inicio	Fin
MATERIALES, DISPOSITIVOS Y TECNOLOGÍAS PARA EL DESARROLLO DE LA INDUSTRIA FOTOVOLTAICA.	Comunidad Autónoma de Madrid	S2018/EMT-4308	01/01/2019	31/12/2022
FOTODETECTORES PARA INFRARROJO CERCANO Y MEDIO BASADOS EN SEMICONDUCTORES HIPERDOPADOS COMPATIBLES CON TECNOLOGÍA CMOS	Ministerio de Economía y Competitividad	TEC2017-84378-R	01/01/2018	31/12/2020
MATERIALES, DISPOSITIVOS Y TECNOLOGÍA PARA EL DESARROLLO DE LA INDUSTRIA FOTOVOLTAICA.	Comunidad Autónoma de Madrid	S2013/MAE-2780	01/10/2014	30/09/2018
FABRICACIÓN DE DISPOSITIVOS DETECTORES DE INFRARROJO PRÓXIMO MEDIANTE SI SUPERSATURADO CON METALES DE TRANSICIÓN.	Ministerio de Economía y Competitividad	TEC2013-41730-R	01/01/2014	31/12/2016

Publicaciones Google Scholar de 1980 a 2025

Título	Fuente	Fecha
High-pressure sputtering deposition and in situ plasma oxidation of TiOx thin films as electron selective contact for photovoltaic applications	Materials Science in Semiconductor Processing 186, 109038 , 2025	2025
Optoelectronic properties of GaP: Ti photovoltaic devices	Materials Today Sustainability 28, 101008 , 2024	2024
Electrónica en acción		2024
Optical, Electrical, and Optoelectronic Characterization of Ti‐Supersaturated Gallium Arsenide	physica status solidi (a), 2400123 , 2024	2024
Native Oxide Layer Role during Cryogenic‐Temperature Ion Implantations in Germanium	physica status solidi (a), 2400124 , 2024	2024
Characterization of TiOx as electron selective contact using low-temperature oxidation process via high-pressure sputtering		2024
Optoelectronic properties of GaP: Ti photovoltaic devices	Elsevier , 2024	2024
Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study	arXiv e-prints, arXiv: 2401.16502 , 2024	2024
Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering	arXiv e-prints, arXiv: 2402.10925 , 2024	2024
Fairchild Semiconductors, donde todo empezó en Silicon Valley: La historia de la empresa donde se inventó el primer circuito integrado viable, principal responsable de la …	Revista Española de Física 38 (2) , 2024	2024
Native Oxide Layer Role during Cryogenic-Temperature Ion Implantations in Germanium	Wiley , 2024	2024
El radar en la historia del siglo XX: unas de las armas decisivas de la Segunda Guerra Mundia	Escolar y Mayo , 2023	2023
El primer transistor europeo. Un éxito que pudo ser y no fue.	Revista Española de Física 37 (3) , 2023	2023
Fabrication of TiO x , by High Pressure Sputtering for Selective Contact in Photovoltaic Cells	2023 14th Spanish Conference on Electron Devices (CDE), 1-4 , 2023	2023
Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells	IEEE Journal of Photovoltaics , 2023	2023
High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs	Materials Science in Semiconductor Processing 153, 107191 , 2023	2023
High Pressure Sputtering of Mo targets in mixed Ar/O2/H2 atmospheres for hole selective contacts in photovoltaic cells		2023
Ti supersaturated Si by microwave annealing processes	Semiconductor Science and Technology 38 (2), 024004 , 2023	2023
Ti supersaturated Si by microwave annealing processes	IOP Publishing , 2023	2023
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements	Semiconductor Science and Technology 38 (3), 034002 , 2023	2023
Fabrication of TiOx, by High Pressure Sputtering for Selective Contact in Photovoltaic Cells		2023
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements	IOP Publishing , 2023	2023
High Pressure Sputtering of Mo Targets in Mixed Ar/O2/H2Atmospheres for Hole Selective Contacts in Photovoltaic Cells	2023 14th Spanish Conference on Electron Devices (CDE) , 2023	2023
Electrical transport properties in Ge hyperdoped with Te	Semiconductor Science and Technology 37 (12), 124001 , 2022	2022
El 75 aniversario del transistor bipolar:“La invención más importante del siglo xx”	Revista española de física 36 (3), 4 , 2022	2022
Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting	IOP Publishing , 2022	2022
On the optoelectronic mechanisms ruling Ti‐hyperdoped Si photodiodes	Advanced Electronic Materials 8 (2), 2100788 , 2022	2022
Electrical transport properties in Ge hyperdoped with Te	Iop Publishing Ltd , 2022	2022
Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells	Elsevier Science Ltd , 2022	2022
Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells	Materials Science in Semiconductor Processing 137, 106189 , 2022	2022
Los orígenes de la energía solar fotovoltaica	Investigación y ciencia 551, 44-51 , 2022	2022
El 75 aniversario del transistor bipolar.“La invención más importante del siglo xx”.	Revista Española de Física 36 (3) , 2022	2022
Transport mechanisms in hyperdoped silicon solar cells	Semiconductor Science and Technology 38 (12), 124001 , 2022	2022
Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting	Semiconductor Science and Technology 38 (2), 024001 , 2022	2022
Métodos de aprendizaje, evaluación y motivación basados en cuestionarios virtuales y metodologías de clase invertida		2021
Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization	IEEE , 2021	2021
High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells	2021 13th Spanish Conference on Electron Devices (CDE), 12-14 , 2021	2021
Aula Virtual de Electrónica		2021
Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization	2021 13th Spanish Conference on Electron Devices (CDE), 1-3 , 2021	2021
El protagonista silencioso de la revolución digital	Investigación y ciencia, 52-57 , 2021	2021
High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells	IEEE , 2021	2021
Integración de la formación teórica y experimental en el área de la Electrónica mediante el desarrollo de una plataforma de demostración del comportamiento real de los …		2020
Energía solar: de la utopía a la esperanza	Guillermo Escolar Editor , 2020	2020
On the properties of GaP supersaturated with Ti	Journal of Alloys and Compounds 820, 153358 , 2020	2020
Los orígenes de la revolución digital: la irrupción de las memorias de semiconductores	Revista Española de Física 34 (3), 7-11 , 2020	2020
On the properties of GaP supersaturated with Ti	Elsevier Science SA , 2020	2020
Mecanismos de transporte en células solares basadas en heterouniones con silicio	Universidad Complutense de Madrid , 2019	2019
Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer	Solar energy materials and solar cells 185, 61-65 , 2018	2018
William Bradford Shockley	Revista española de física 31 (4), 56-61 , 2018	2018
Mejora de las Metodologías Docentes para el área de la Electrónica		2018
Microelectrónica: la historia de la mayor revolución silenciosa del siglo XX	Ediciones Complutense , 2018	2018
Strong subbandgap photoconductivity in GaP implanted with Ti	Progress in Photovoltaics: Research and Applications 26 (3), 214-222 , 2018	2018
Strong subbandgap photoconductivity in GaP implanted withTi	Wiley , 2018	2018
Vanadium supersaturated silicon system: a theoretical and experimental approach	Journal of Physics D: Applied Physics 50 (49), 495101 , 2017	2017
A robust method to determine the contact resistance using the van der Pauw set up	Measurement 98, 151-158 , 2017	2017
High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation	Semiconductor Science and Technology 32 (3), 035016 , 2017	2017
Vanadium supersaturated silicon system: a theoretical and experimental approach	Journal of Physics D: Applied Physics 50 (49) , 2017	2017
Effects of Gd 2 O 3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs	IEEE Electron Device Letters 38 (5), 611-614 , 2017	2017
Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures	Journal of Physics D: Applied Physics 49 (27), 275103 , 2016	2016
Deposition of Intrinsic a-Si: H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells	IEEE Journal of Photovoltaics 6 (5), 1059-1064 , 2016	2016
Compositional Dependence of Chemical and Electrical Properties in Cu 2 ZnSnS 4 Thin Films	IEEE Journal of Photovoltaics 6 (4), 990-996 , 2016	2016
Electrical characterization of amorphous silicon mis-based structures for hit solar cell applications	Nanoscale Research Letters 11, 1-7 , 2016	2016
Limitations of high pressure sputtering for amorphous silicon deposition	Materials Research Express 3 (3), 036401 , 2016	2016
Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap	Journal of Physics D: Applied Physics 49 (5), 055103 , 2016	2016
Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd 2 O 3 as Gate Dielectric	IEEE Transactions on Electron Devices 63 (7), 2729-2734 , 2016	2016
Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates	IOP Science , 2015	2015
Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications	Applied Physics Letters 106 (2) , 2015	2015
High- k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors	ACS applied materials & interfaces 7 (1), 62-67 , 2015	2015
Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates	Semiconductor Science and Technology 30 (3), 035023 , 2015	2015
High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors	Amer Chemical Soc. , 2015	2015
Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd 2 O 3 as gate dielectric	2015 10th Spanish Conference on Electron Devices (CDE), 1-4 , 2015	2015
Meyer Neldel rule application to silicon supersaturated with transition metals	Journal of Physics D: Applied Physics 48 (7), 075102 , 2015	2015
Amorphous/crystalline silicon interface characterization by capacitance and conductance measurements	2015 10th Spanish Conference on Electron Devices (CDE), 1-4 , 2015	2015
A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications	Journal of Applied Physics 118 (24) , 2015	2015
Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering	Thin Solid Films 593, 62-66 , 2015	2015
High pressure sputtering for high-k dielectric deposition. Is it worth trying	ECS Transactions 61 (2), 27 , 2014	2014
Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector	Applied Physics Letters 104 (21) , 2014	2014
High pressure sputtering for kigh-k dielectric deposition. Is it worth trying?	IOP Science , 2014	2014
Growth and interface engineering of highly strained low bandgap group IV semiconductors	2014 7th International Silicon-Germanium Technology and Device Meeting … , 2014	2014
Multiphononon resonant Raman scattering in He+-implanted InGaN	Semiconductor Science and Technology 29 (4), 045013 , 2014	2014
Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric	Telecomunicacion , 2014	2014
Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes	2013 Spanish Conference on Electron Devices, 285-288 , 2013	2013
Electrical decoupling effect on intermediate band Ti-implanted silicon layers	Journal of Physics D: Applied Physics 46 (13), 135108 , 2013	2013
Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells	2013 Spanish Conference on Electron Devices, 337-340 , 2013	2013
Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells	Japanese Journal of Applied Physics 52 (12R), 122302 , 2013	2013
Towards high-k integration with III-V channels: Interface optimization of high pressure sputtered gadolinium oxide on indium phospide	2013 Spanish Conference on Electron Devices, 25-28 , 2013	2013
The intermediate band approach in the third solar cell generation context	IEEE , 2013	2013
Física y Energía	Revista Española de Física 27 (2), 1 , 2013	2013
Células solares de banda intermedia	Revista española de física 27 (2), 20-22 , 2013	2013
Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material	2013 Spanish Conference on Electron Devices, 377-380 , 2013	2013
Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics	Semiconductor science and technology 28 (8), 085004 , 2013	2013
Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon	AVS Amer Inst. Physics , 2013	2013
The intermediate band approach in the third solar cell generation context	2013 Spanish Conference on Electron Devices, 297-300 , 2013	2013
Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon	Journal of Vacuum Science & Technology B 31 (1) , 2013	2013
Double ion implantation and pulsed laser melting processes for third generation solar cells	International Journal of Photoenergy 2013 (1), 473196 , 2013	2013
High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments	Microelectronic engineering 109, 223-226 , 2013	2013
Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation	Elsevier , 2013	2013
Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric	2013 Spanish Conference on Electron Devices, 5-8 , 2013	2013
Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells	IEEE , 2013	2013
Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics	IOP Science , 2013	2013
Study of the electrical behavior in Intermediate Band-Si junctions	MRS Online Proceedings Library (OPL) 1493, 85-90 , 2013	2013
Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon		2013
Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation	Microelectronic engineering 109, 236-239 , 2013	2013
Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si	American Institute of Physics , 2013	2013
Electrical decoupling effect on intermediate band Ti-implanted silicon layers	IOP Publishing LTD , 2013	2013
Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si	Journal of Applied Physics 114 (5) , 2013	2013
Towards a new generation of solar cells: silicon supersaturated with titanium or vanadium	Telecomunicacion , 2013	2013
Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering	Journal of Vacuum Science & Technology B 31 (1) , 2013	2013
Interface quality of Sc2O3 and Gd2O3 films based metal–insulator–silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes	Journal of Vacuum Science & Technology B 31 (1) , 2013	2013
Intermediate band solar cells. The transition metal supersaturated Silicon approach	Telecomunicacion , 2013	2013
Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon	Applied Physics Letters 103 (3) , 2013	2013
The Intermediate Band approach in the third solar cell generation context	Proceedings of the 2013 Spanish Conference on Electron Devices, 75 , 2013	2013
High pressure sputtering as a viable technique for future high permittivity dielectric on III–V integration: GdOx on InP demonstration	Journal of Vacuum Science & Technology B 31 (1) , 2013	2013
Gadolinium scandate by high pressure sputtering as a high-k dielectric	2013 Spanish Conference on Electron Devices, 17-20 , 2013	2013
Sub-bandgap spectral photo-response analysis of Ti supersaturated Si	Applied Physics Letters 101 (19) , 2012	2012
Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon	Solar Energy Materials and Solar Cells 104, 159-164 , 2012	2012
Interstitial Ti for intermediate band formation in Ti-supersaturated silicon	Journal of Applied Physics 112 (11) , 2012	2012
Ion implant technology for intermediate band solar cells	Next Generation of Photovoltaics: New Concepts, 321-346 , 2012	2012
Ion implantation and pulsed laser melting processing for the development of an intermediate band material	AIP Conference Proceedings 1496 (1), 54-57 , 2012	2012
Low temperature intermediate band metallic behavior in Ti implanted Si	Thin Solid Films 520 (21), 6614-6618 , 2012	2012
Optimization of scandium oxide growth by high pressure sputtering on silicon	Thin Solid Films 526, 81-86 , 2012	2012
Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs	IEEE Transactions on Device and Materials Reliability 12 (1), 166-170 , 2012	2012
Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs	Institute of Electrical and Electronics Engineers , 2012	2012
Montaje y optimización de un sistema de pulverización catódica de alta presión de silicio amorfo hidrogenado (Assembly and optimizatión of a high pressure sputtering system for …		2012
Low temperature intermediate band metallic behavior in Ti implanted Si	Elsevier Science SA , 2012	2012
Optimization of scandium oxide growth by high pressure sputtering on silicon	Elsevier , 2012	2012
METHOD FOR MANUFACTURING A LATERAL INTERMEDIATE-BAND SOLAR CELL	WO Patent 2,012,072,839 , 2012	2012
Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering	Elsevier , 2011	2011
Sub-bandgap absorption in Ti implanted Si over the Mott limit	Journal of Applied Physics 109 (11) , 2011	2011
Positive bias temperature instabilities on sub-nanometer EOT FinFETs	Microelectronics Reliability 51 (9-11), 1521-1524 , 2011	2011
Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering	Microelectronic engineering 88 (9), 2991-2996 , 2011	2011
Insulator-metallic transition in Ti implanted silicon layers for Intermediate Band	Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 1-4 , 2011	2011
Two-layer Hall effect model for intermediate band Ti-implanted silicon	Journal of Applied Physics 109 (6) , 2011	2011
Interface engineering by metal electrode scavenging of Gd 2 O 3 films sputtered on Si	Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 1-4 , 2011	2011
Depth profile study of Ti implanted Si at very high doses	Journal of Applied Physics 110 (6) , 2011	2011
Track: Materials and process technology		2011
UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation	Semiconductor science and technology 26 (11), 115003 , 2011	2011
Electrical characterization of high-pressure reactive sputtered ScOx films on silicon	Thin Solid Films 519 (7), 2268-2272 , 2011	2011
Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study	Microelectronic engineering 88 (7), 1357-1360 , 2011	2011
Caracterización eléctrica de diodos Si realizados mediante implantación ionica.	Revista española de física 16 (2) , 2011	2011
Visible and UV Raman scattering study of lattice recovery on Ti implanted silicon layers	Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 1-4 , 2011	2011
Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications	Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 1-3 , 2011	2011
Nitridation of Si by N [sub 2] Electron Cyclotron Resonance Plasma and Integration with ScO [sub x] Deposition	Journal of The Electrochemical Society 157 (4) , 2010	2010
Thermal stability of intermediate band behavior in Ti implanted Si	Solar energy materials and solar cells 94 (11), 1907-1911 , 2010	2010
Electrical Characterization of High-Pressure Reactive Sputtered Sc2O3 Films on Silicon	ECS Transactions 28 (1), 287 , 2010	2010
Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks	Journal of Applied Physics 107 (11) , 2010	2010
Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties	Journal of Applied Physics 107 (8) , 2010	2010
High quality Ti-implanted Si layers above the Mott limit	Journal of Applied Physics 107 (10) , 2010	2010
Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties	American Institute of Physics , 2010	2010
METHOD FOR THE PRODUCTION OF A SILICON SOLAR CELL WITH AN INTERMEDIATE BAND	WO Patent 2,010,094,817 , 2010	2010
High quality Ti-implanted Si layers above the Mott limit	American Institute of Physics , 2010	2010
Nitridation of Si by N2 Electron Cyclotron Resonance Plasma and Integration with ScO x Deposition	Journal of The Electrochemical Society 157 (4), H430 , 2010	2010
Laser thermal annealing effects on single crystal gallium phosphide	Journal of Applied Physics 106 (5) , 2009	2009
High Quality Ti-Implanted Si Layers Above Solid Solubility Limit	IEEE , 2009	2009
Interfacial Properties of HfO 2 / SiN/Si Gate Structures	2009 Spanish Conference on Electron Devices, 23-26 , 2009	2009
Intermediate band mobility in heavily titanium-doped silicon layers	Solar Energy Materials and Solar Cells 93 (9), 1668-1673 , 2009	2009
Pulsed laser melting effects on single crystal gallium phosphide	2009 Spanish Conference on Electron Devices, 42-45 , 2009	2009
High quality Ti-implanted Si layers above solid solubility limit	2009 Spanish Conference on Electron Devices, 38-41 , 2009	2009
ToF-SIMS Study of Pulsed Laser Melting Energy Density on Ti Implanted Si for Intermediate Band	MRS Online Proceedings Library (OPL) 1210, 1210-Q08-16 , 2009	2009
Ti-doped gallium phosphide layers with concentrations above the Mott limit	MRS Online Proceedings Library (OPL) 1210, 1210-Q03-17 , 2009	2009
High Quality Ti-Implanted Si Layers Above Solid Solubility Limit		2009
Growth of Silicon Nitride on Silicon by Electron Cyclotron Resonance Plasma Nitridation	2009 Spanish Conference on Electron Devices, 16-18 , 2009	2009
Electronic transport properties of Ti-impurity band in Si	Journal of Physics D: Applied Physics 42 (8), 085110 , 2009	2009
Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material	Applied Physics Letters 94 (4) , 2009	2009
Raman and Rutherford Backscattering characterization of Ti-implanted Si above the Mott limit	MRS Online Proceedings Library (OPL) 1210, 1210-Q04-10 , 2009	2009
Physical properties of high pressure reactively sputtered hafnium oxide	Pergamon-Elsevier Science Ltd , 2008	2008
New developments in charge pumping measurements on thin stacked dielectrics	IEEE transactions on electron devices 55 (11), 3184-3191 , 2008	2008
Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon	Journal of Applied Physics 104 (9) , 2008	2008
Trapping in 1nm EOT high-k/MG	ECS Transactions 16 (5), 77 , 2008	2008
Physical properties of high pressure reactively sputtered hafnium oxide	Vacuum 82 (12), 1391-1394 , 2008	2008
Titanium doped silicon layers with very high concentration	Journal of Applied Physics 104 (1) , 2008	2008
Reliability of strained-Si devices with post-oxide-deposition strain introduction	IEEE transactions on electron devices 55 (12), 3432-3441 , 2008	2008
Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection	Microelectronic engineering 84 (9-10), 1943-1946 , 2007	2007
A reliable metric for mobility extraction of short-channel MOSFETs	IEEE transactions on electron devices 54 (10), 2690-2698 , 2007	2007
Optical spectroscopic study of the SiN∕ HfO2 interfacial formation during rf sputtering of HfO2	Applied Physics Letters 91 (19) , 2007	2007
Accurate Gate Impedance Determination on Ultraleaky MOSFETs by Fitting to a Three-Lumped-Parameter Model atFrequencies From DC to RF	IEEE transactions on electron devices 54 (7), 1705-1712 , 2007	2007
Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering	Journal of Physics D: Applied Physics 40 (17), 5256 , 2007	2007
Mobility extraction using RFCV for 80 nm MOSFET with 1 nm EOT HfSiON/TiN	Microelectronic engineering 84 (9-10), 1878-1881 , 2007	2007
Advanced electrical characterization toward (sub) 1nm EOT HfSiON-hole trapping in PFET and L-dependent effects	2007 IEEE Symposium on VLSI Technology, 32-33 , 2007	2007
Optical spectroscopic study of the SiN	Applied physics letters 91 (19) , 2007	2007
High-k characterization by RFCV		2007
High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties	Journal of Applied Physics 102 (4) , 2007	2007
Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF		2007
Negligible effect of process-induced strain on intrinsic NBTI behavior	IEEE electron device letters 28 (3), 242-244 , 2007	2007
Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2	Amer Inst Physics , 2007	2007
Line width dependent mobility in high-k a comparative performance study between FUSI and TiN	2007 International Symposium on VLSI Technology, Systems and Applications … , 2007	2007
High-k characterization by RFCV	ECS Transactions 11 (4), 363 , 2007	2007
Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics	Semiconductor science and technology 22 (12), 1344 , 2007	2007
Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiN		2007
High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties	American Institute of Physics , 2007	2007
Performance assessment of (1 1 0) p-FET high-κ/MG: is it mobility or series resistance limited?	Microelectronic engineering 84 (9-10), 2058-2062 , 2007	2007
Isotopic study of the nitrogen-related modes in N+-implanted ZnO	Applied physics letters 90 (18) , 2007	2007
High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties		2007
Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios	Materials science in semiconductor processing 9 (6), 1020-1024 , 2006	2006
Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis	Thin solid films 515 (2), 695-699 , 2006	2006
Raman Scattering Characterization of Implanted ZnO	MRS Online Proceedings Library (OPL) 957, 0957-K07-24 , 2006	2006
Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios	Materials Science in Semiconductor Processing 9, 1020-1024 , 2006	2006
Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis		2006
Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis	Elsevier Science SA , 2006	2006
RF split capacitance–voltage measurements of short-channel and leaky MOSFET devices	IEEE electron device letters 27 (9), 772-774 , 2006	2006
Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O-2 ratios		2006
Optimization of Sub-Melt Laser Anneal: Performance and Reliability	2006 International Electron Devices Meeting , 2006	2006
Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis	Elsevier , 2006	2006
Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O-2 ratios	Elsevier Science Ltd , 2006	2006
Optimization of sub-melt laser anneal: performance and reliability	2006 International Electron Devices Meeting, 1-4 , 2006	2006
NBTI study on PMOS devices with TiN/HfO2 gate stack and process induced strain	ECS transactions 3 (2), 253 , 2006	2006
Oxygen to silicon ratio determination of SiOxHy thin films	Thin solid films 492 (1-2), 232-235 , 2005	2005
On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD	Microelectronics Reliability 45 (5-6), 978-981 , 2005	2005
Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon	Conference on Electron Devices, 2005 Spanish, 49-52 , 2005	2005
A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition	Semiconductor science and technology 20 (10), 1044 , 2005	2005
Physical properties of high pressure reactively sputtered TiO2	AVS Amer. Inst. Physics , 2005	2005
A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition		2005
Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon	IEEE , 2005	2005
Physical properties of high pressure reactively sputtered TiO2	Journal of Vacuum Science & Technology A 23 (6), 1523-1530 , 2005	2005
On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD		2005
Oxygen to silicon ratio determination of SiOXHY thin films	Elsevier Science SA , 2005	2005
On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD	Pergamon-Elsevier Science Ltd. , 2005	2005
A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition	Iop Publishing Ltd , 2005	2005
Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiO2/SiNx and SiOxNy Dielectric Films on Silicon …	Japanese journal of applied physics 43 (1R), 66 , 2004	2004
Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada	BOLETIN-SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO 43 (2), 386-389 , 2004	2004
Procesos de oxidación de Si mediante plasma de resonancia ciclotrónica de electrones	Sociedad Española de Cerámica y Vidrio , 2004	2004
Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices	Iop Publishing Ltd , 2004	2004
Fabricación y caracterización de dieléctricos de alta permitividad para su aplicación como aislantes de puerta en dispositivos MIS	Fabricación y caracterización de dieléctricos de alta permitividad para su … , 2004	2004
Influence of H on the composition and atomic concentrations of" N-rich" plasma deposited SiOxNyHz films	American Institute of Physics , 2004	2004
Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method	Thin Solid Films 459 (1-2), 203-207 , 2004	2004
Compositional analysis of thin SiOxNy: H films by heavy-ion ERDA, standard RBS, EDX and AES: a comparison		2004
Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon …	Inst. Pure Applied Physics , 2004	2004
Hydrogenated polycrystalline SiGe films and their application in Thin Film Transistors	BOLETIN DE LA SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO 43 (2), 386-389 , 2004	2004
Influence of H on the composition and atomic concentrations of “N-rich” plasma deposited films	Journal of applied physics 95 (10), 5373-5382 , 2004	2004
Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method	Elsevier Science SA , 2004	2004
Si oxidation processes by electron cyclotron resonance plasmas	BOLETIN DE LA SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO 43 (2), 379-382 , 2004	2004
Compositional analysis of thin SiOxNy: H films by heavy-ion ERDA, standard RBS, EDX and AES: a comparison	Elsevier , 2004	2004
Procesos de oxidación de Si mediante plasma de resonancia ciclotrónica de electrones	Boletín de la Sociedad Española de Cerámica y Vidrio 43 (2), 379-382 , 2004	2004
Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method	Elsevier , 2004	2004
Compositional analysis of thin SiOxNy: H films by heavy-ion ERDA, standard RBS, EDX and AES: a comparison	Nuclear Instruments and Methods in Physics Research Section B: Beam … , 2004	2004
Shpilevskiy, EM, 254 Sikola, T., 17 Šiljegovic, M., 23 ˇ	Thin Solid Films 459, 323-324 , 2004	2004
Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada	Sociedad Española de Cerámica y Vidrio , 2004	2004
Rapid thermally annealed plasma deposited thin films: Application to metal–insulator–semiconductor structures with Si, and InP	Journal of applied physics 94 (4), 2642-2653 , 2003	2003
A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide	Kluwer Academic Publ. , 2003	2003
Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition	Journal of applied physics 93 (11), 8930-8938 , 2003	2003
Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method	American Institute of Physics , 2003	2003
Optical and structural properties of SiO x N y H z films deposited by electron cyclotron resonance and their correlation with composition	Journal of Applied Physics 93 (11), 8930-8938 , 2003	2003
Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films	Journal of Materials Science: Materials in Electronics 14, 287-290 , 2003	2003
A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide	Journal of Materials Science: Materials in Electronics 14, 375-378 , 2003	2003
Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer … , 2003	2003
Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices	Semiconductor science and technology 19 (2), 133 , 2003	2003
Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators	AVS Amer Inst. Physics , 2003	2003
Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films	Kluwer Academic Publ. , 2003	2003
Bonding configuration and density of defects of thin films deposited by the electron cyclotron resonance plasma method	Journal of Applied Physics 94 (12), 7462-7469 , 2003	2003
Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing	Journal of applied physics 93 (11), 9019-9023 , 2003	2003
Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films		2003
Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition	American Institute of Physics , 2003	2003
Microstructural modifications induced by rapid thermal annealing in plasma deposited films	Journal of applied physics 94 (2), 1019-1029 , 2003	2003
Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films	American Institute of Physics , 2003	2003
Interfacial state density and conductance-transient three-dimensional profiling of disordered-induced gap states on metal insulator semiconductor capacitors fabricated from …	Japanese journal of applied physics 42 (8R), 4978 , 2003	2003
Rapid thermally annealed plasma deposited SiNx: H thin films: Application to metal-insulator-semiconductor structures with Si, In0. 53Ga0. 47As, and InP	American Institute of Physics , 2003	2003
Rapid thermally annealed plasma deposited SiNx: H thin films: Application to metal-insulator-semiconductor structures with Si, In0. 53Ga0. 47As, and InP		2003
Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique	Semiconductor science and technology 18 (7), 633 , 2003	2003
Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films		2003
Conductance transient comparative analysis of ECR-PECVD deposited SiNx, SiO2/SiNx and SiOxNy dielectric films on silicon substrates	MRS Online Proceedings Library (OPL) 786, E3. 12 , 2003	2003
Physical properties of plasma deposited SiOx thin films	Vacuum 67 (3-4), 525-529 , 2002	2002
Improvement of SiNx: H/InP gate structures for the fabrication of metal–insulator–semiconductor field-effect transistors	Semiconductor science and technology 17 (7), 672 , 2002	2002
Compositional analysis of SiO x N y :H films by heavy‐ion ERDA: the problem of radiation damage	Surface and Interface Analysis: An International Journal devoted to the … , 2002	2002
Rapid thermal annealing effects on plasma deposited SiOx: H films		2002
Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx: H films	American Institute of Physics , 2002	2002
Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance	Pergamon-Elsevier Science Ltd. , 2002	2002
Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance		2002
Compositional analysis of SiOxNy: H films by heavy-ion ERDA: the problem of radiation damage	John Wiley & Sons Ltd. , 2002	2002
Rapid thermal annealing effects on plasma deposited SiOx: H films	Pergamon-Elsevier Science Ltd. , 2002	2002
Physical properties of plasma deposited SiOx thin films	Pergamon-Elsevier Science Ltd. , 2002	2002
Rapid thermal annealing effects on plasma deposited SiOx: H films	Vacuum 67 (3-4), 531-536 , 2002	2002
Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance	Vacuum 67 (3-4), 507-512 , 2002	2002
Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments	International Journal of Modern Physics B 16 (28n29), 4401-4404 , 2002	2002
Thermally induced modifications on bonding configuration and density of defects of plasma deposited films	Journal of applied physics 92 (4), 1906-1913 , 2002	2002
Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx: H films		2002
Day, SR, 301 de la L. Olvera, M., 242 Donnelly, K., 102 Dowling, DP, 102	Thin Solid Films 394, 304 , 2001	2001
Electrical properties of rapid thermally annealed SiNx: H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy	Semiconductor science and technology 16 (7), 534 , 2001	2001
Electrical Characterization of Al/SiNx: H/n and p-In0. 53Ga0. 47As Structures by Deep-Level Transient Spectroscopy and Conductance Transient Techniques	Japanese Journal of Applied Physics 40 (7R), 4479 , 2001	2001
Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx: H/Si devices	American Institute of Physics , 2001	2001
C–V, DLTS and conductance transient characterization of SiN x :H/InP interface improved by N 2 remote plasma cleaning of the InP surface	Journal of Materials Science: Materials in Electronics 12, 263-267 , 2001	2001
Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Molecular models and activation energies for bonding rearrangement in plasma-deposited a-SiNc: H …	Physical Review-Section B-Condensed Matter 63 (24), 245320-245320 , 2001	2001
Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of structures	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer … , 2001	2001
Effect of Dielectric Layers on the Performance of AlGaN‐Based UV Schottky Photodiodes	physica status solidi (a) 188 (1), 307-310 , 2001	2001
Characterization of polycrystalline Cu (In, Ga) Te2 thin films prepared by pulsed laser deposition	Thin Solid Films 394 (1-2), 23-28 , 2001	2001
Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures	MRS Online Proceedings Library (OPL) 699, R4. 4 , 2001	2001
Molecular models and activation energies for bonding rearrangement in plasma-deposited dielectric thin films treated by rapid thermal annealing	Physical Review B 63 (24), 245320 , 2001	2001
C-V, DLTS and conductance transient characterization of\hbox {SiN} _ {x}\,{\bf:}\,\hbox {H/InP} interface improved by\hbox {N} _ {2} remote plasma cleaning of the InP surface	Journal of Materials Science: Materials in Electronics 12 (4-6), 263-267 , 2001	2001
Molecular models and activation energies for bonding rearrangement in plasma-deposited (formula presented) dielectric thin films treated by rapid thermal annealing	Physical Review B-Condensed Matter and Materials Physics 63 (24) , 2001	2001
Temperature effects on the electrical properties and structure of interfacial and bulk defects in devices	Journal of Applied Physics 90 (3), 1573-1581 , 2001	2001
Comparison between n-type and p-type Al/SiNx: H/In0. 53Ga0. 47As devices deposited by electron cyclotron resonance technique	Semiconductor science and technology 15 (8), 823 , 2000	2000
N2 remote plasma cleaning of InP to improve SiNx: H/InP interface performance	Microelectronics Reliability 40 (4-5), 837-840 , 2000	2000
Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx: H/InP and Al/SiNx: H/In0. 53Ga0. 47As structures by DLTS and conductance transient …	Microelectronics Reliability 40 (4-5), 845-848 , 2000	2000
Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx: H films deposited by electron cyclotron resonance	American Institute of Physics , 2000	2000
Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx: H/InP metal-insulator-semiconductor structures	Japanese Journal of Applied Physics 39 (11R), 6212 , 2000	2000
Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx: H films deposited by electron cyclotron resonance	Journal of Applied Physics 87 (3), 1187-1192 , 2000	2000
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Rapid thermal annealing effects on the structural properties and density of …	Journal of Applied Physics 87 (3), 1187-1192 , 2000	2000
High-quality Si-implanted epitaxial layers and their application to junction devices	Journal of Applied Physics 87 (7), 3478-3482 , 2000	2000
Compositional analysis of amorphous SiN x : H films by ERDA and infrared spectroscopy	Surface and Interface Analysis: An International Journal devoted to the … , 2000	2000
Defect structure of films and its evolution with annealing temperature	Journal of Applied Physics 88 (4), 2149-2151 , 2000	2000
Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride A1/SiNx: H/InP and A1/SiNx: H/in0. 53Ga0. 47As structures by DLTS and conductance transient …	Microelectronics Reliability 40 (4-5), 845-848 , 2000	2000
Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry	Thin Solid Films 349 (1-2), 135-146 , 1999	1999
Electronic Materials and Processing/Plasma Science and Technology/Selected Energy Epitaxy-Plasma Processing of Compound Semiconductors-Thermally induced improvements on SINx: H …	Journal of Vacuum Science and Technology-Section A-Vacuum Surfaces and Films … , 1999	1999
Thermal stability of films deposited by plasma electron cyclotron resonance	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (4 … , 1999	1999
Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealing	Thin solid films 343, 433-436 , 1999	1999
Thermally induced improvements on devices	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (4 … , 1999	1999
Growth and characterization of Cu x Ag 1-x InSe 2 thin films by pulsed laser deposition	Diffusion and Defect Data Pt. B: Solid State Phenomena, 361-366 , 1999	1999
Thermally induced changes in the optical properties of films deposited by the electron cyclotron resonance plasma method	Journal of applied physics 86 (4), 2055-2061 , 1999	1999
Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced metal–insulator–semiconductor structures …	Journal of Applied Physics 86 (12), 6924-6930 , 1999	1999
Optical-constant calculation of non-uniform thickness thin films of the Ge10As15Se75 chalcogenide glassy alloy in the sub-band-gap region (0.1–1.8 eV)	Materials chemistry and physics 60 (3), 231-239 , 1999	1999
Low interface trap density in rapid thermally annealed metal–insulator–semiconductor devices	Applied physics letters 74 (7), 991-993 , 1999	1999
Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality\hbox {Al/SiN} _ {x}\hbox {/InP} MIS structure fabrication	Journal of Materials Science: Materials in Electronics 10 (5-6), 373-377 , 1999	1999
Effect of substrate temperature in films deposited by electron cyclotron resonance	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (4 … , 1999	1999
Gate quality of ex situ deposited Al/SiNx: H/n-In0. 53Ga0. 47As devices after rapid thermal annealing	Semiconductor science and technology 14 (7), 628 , 1999	1999
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Thermally induced changes in the optical properties of SiNx: H films …	Journal of Applied Physics 86 (4), 2055-2061 , 1999	1999
Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature	Thin Solid Films 343, 437-440 , 1999	1999
ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)-Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx: H/InP	Journal of Applied Physics 86 (12), 6924-6930 , 1999	1999
Good quality metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method	Journal of applied physics 83 (1), 600-603 , 1998	1998
Dependence of the physical properties of SiNx: H films deposited by the ECR plasma method on the discharge size	Thin solid films 315 (1-2), 22-28 , 1998	1998
Deposition of SiNx: H thin films by the electron cyclotron resonance and its application to Al/SiNx: H/Si structures	Journal of Applied Physics 83 (1), 332-338 , 1998	1998
Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method	Thin solid films 317 (1-2), 116-119 , 1998	1998
Influence of rapid thermal annealing processes on the properties of SiNx: H films deposited by the electron cyclotron resonance method	Journal of non-crystalline solids 227, 523-527 , 1998	1998
Experimental verification of the physics and structure of the bipolar junction transistor	IEEE Transactions on Education 41 (3), 224-228 , 1998	1998
A laboratory experiment with blue light-emitting diodes	American Journal of Physics 65 (5), 371-376 , 1997	1997
The influence of film properties on the electrical characteristics of metal-insulator-semiconductor devices	Semiconductor science and technology 12 (12), 1650 , 1997	1997
Analysis of light-emission processes in light-emitting diodes and semiconductor lasers	European Journal of Physics 18 (2), 63 , 1997	1997
Conductance transients study of slow traps in Al/SiNx: H/Si and Al/SiNx: H/InP metal-insulator-semiconductor structures	MRS Online Proceedings Library (OPL) 500, 87 , 1997	1997
Experimental observation of conductance transients in metal-insulator-semiconductor structures	Applied physics letters 71 (6), 826-828 , 1997	1997
Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III–V nitrides	Journal of applied physics 81 (5), 2442-2444 , 1997	1997
Láminas delgadas aislantes derivadas del silicio depositado mediante la técnica ECR-CVD	Boletín de la Sociedad Española de Cerámica y Vidrio 36 (2), 264-270 , 1997	1997
Insulating thin films based on Si deposited by ECR-CVD	BOLETIN-SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO 36, 264-270 , 1997	1997
An undergraduate experiment: The determination of the structure of Ge and Si based bipolar transistors	International journal of electrical engineering education 34 (1), 16-28 , 1997	1997
El quincuagésimo aniversario del transistor	Revista española de física 11 (2), 16-20 , 1997	1997
DC characterization of fully ion-implanted pn junctions into semi-insulating InP	IEEE Transactions on Electron Devices 43 (3), 396-401 , 1996	1996
Properties of a-SiN x .: H films deposited at room temperature by the electron cyclotron resonance plasma method	Philosophical Magazine B 73 (3), 487-502 , 1996	1996
The physics of PN junctions in laboratory; La fisica de la union PN en el laboratorio	Revista Española de Física 9 , 1995	1995
Electrical and optical characterization of Mg, Mg/P, and Mg/Ar implants into InP: Fe	Journal of electronic materials 24, 59-67 , 1995	1995
Analysis of the oxygen contamination present in SiN x films deposited by electron cyclotron resonance	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13 (3 … , 1995	1995
La física de la unión PN en el laboratorio	Revista española de física 9 (1), 39-43 , 1995	1995
Deep‐level transient spectroscopy and electrical characterization of ion‐implanted p ‐ n junctions into undoped InP	Journal of applied physics 78 (9), 5325-5330 , 1995	1995
Influence of the deposition parameters on the bonding and optical properties of SiNx ECR films	Journal of non-crystalline solids 187, 329-333 , 1995	1995
Role of oxygen on the dangling bond configuration of low oxygen content SiN x :H films deposited at room temperature	Applied physics letters 67 (22), 3263-3265 , 1995	1995
Growth of chalcopyrite Cu(In,Ga)Se 2 /CuIn 3 Se 5 absorbers by radio frequency sputtering	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13 (3 … , 1995	1995
Electrical and optical characterisation of silicon and silicon/phosphorus implantsin InP doped with iron	Materials science and technology 11 (11), 1203-1206 , 1995	1995
RTA of SI implantations into semi-insulating INP	Anales de Fisica (1992);(Spain) 90 (1) , 1994	1994
Stoichiometry control over a wide composition range of sputtered CuGaxIn (1− x) Se2	Applied physics letters 64 (10), 1239-1241 , 1994	1994
Photoluminescence and electrical characterization of shallow Mg, Mg/Ar and Mg/P implants into InP: Fe	Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide … , 1994	1994
Optical characterization of silicon nitride films deposited by ECR-CVD	Vacuum 45 (10-11), 1027-1028 , 1994	1994
Capacitance measurements of pn junctions: depletion layer and diffusion capacitance contributions	European journal of physics 14 (2), 86 , 1993	1993
Emission line intensities in an rf sputtering glow discharge system	Thin solid films 228 (1-2), 133-136 , 1993	1993
Optical spectroscopic study of the growth dynamics of radio‐frequency‐sputtered YBa 2 Cu 3 O 7− x thin films	Applied physics letters 61 (2), 231-233 , 1992	1992
Determination of the dark and illuminated characteristic parameters of a solar cell from IV characteristics	European journal of physics 13 (4), 193 , 1992	1992
Optical analysis of absorbing thin films: application to ternary chalcopyrite semiconductors	Applied optics 31 (10), 1606-1611 , 1992	1992
Undergraduate laboratory experiment: Measurement of the complex refractive index and the band gap of a thin film semiconductor	American Journal of Physics 60 (1), 83-86 , 1992	1992
Chalcopyrite CuGa x In 1− x Se 2 semiconducting thin films produced by radio frequency sputtering	Applied physics letters 60 (15), 1875-1877 , 1992	1992
A laboratory experiment for DC characterization of pn devices	European Journal of Physics 12 (3), 149 , 1991	1991
Electrical characterization of all-sputtered CdS/CuInSe2 solar cell heterojunctions	Solar cells 28 (1), 31-39 , 1990	1990
Growth and Physical Properties of CuGaSe 2 Thin Films by R. F. Sputtering	Journal of materials science letters 9 (2), 237-240 , 1990	1990
Structural, electrical, and optical properties of CuGaSe 2 rf sputtered thin films	Journal of applied physics 68 (1), 189-194 , 1990	1990
Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe 2 /CdS solar cell heterojunctions	Journal of applied physics 65 (8), 3236-3241 , 1989	1989
Substrate temperature effect on the optical properties of radio‐frequency sputtered CuInSe 2 thin films	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 … , 1989	1989
Influence of interface states on the electrical characteristics of all-sputtered CuxS/CdS solar cells	Solar energy materials 17 (4), 279-287 , 1988	1988
Effects of argon partial pressure and hydrogen admixtures on the properties of sputtered CuInSe2 thin films	Applied Surface Science 33, 844-853 , 1988	1988
Capacitance characterisation of Cu2S/CdS heterojunctions	Semiconductor science and technology 3 (8), 781 , 1988	1988
CuInSe2 thin films produced by rf sputtering in Ar/H2 atmospheres	Journal of applied physics 62 (10), 4163-4169 , 1987	1987
Thin CuxS sputtered films in Ar/H2 atmospheres	Vacuum 37 (5-6), 437-439 , 1987	1987
Sputtering process of Cu2S in an Ar atmosphere	Vacuum 37 (5-6), 433-436 , 1987	1987
R.F. Sputtered CuInSe 2 Thin Films in Ar/H 2 Atmospheres	Seventh EC Photovoltaic Solar Energy Conference: Proceedings of the … , 1987	1987
Role of defects in the annealing behaviour of RF sputtered CdS films	Phys. Status Solidi A;(German Democratic Republic) 94 (2) , 1986	1986
Heat treatment of rf sputtered CdS films for solar cell applications	Solar Energy Materials 12 (5), 345-352 , 1985	1985
INFLUENCE OF HYDROGEN ON PHOTOVOLTAIC THIN Cu//xS SPUTTERED FILMS.	Commission of the European Communities,(Report) EUR, 871-873 , 1985	1985
Structural and optical properties of rf-sputtered CdS thin films	Thin Solid Films 120 (1), 31-36 , 1984	1984
Temperature and bias effects on the electrical properties of CdS thin films prepared by rf sputtering	Thin Solid Films 114 (4), 327-334 , 1984	1984
Electrical transport properties of polycrystalline rf sputtered CdS thin films	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2 (4 … , 1984	1984
Propiedades eléctricas de películas delgadas de CdS producidas por pulverización RF	PQDT-Global , 1984	1984
Influence of the sputtering gas pressure on deposition profiles	J. Vac. Sci. Technol. A 1 (3) , 1983	1983
Deposition dependence of rf-sputtered CdS films	Thin Solid Films 90 (3), 253-257 , 1982	1982
Resistividad de películas delgadas de CdS producidas por pulverización R. F, dependencia con las condiciones de producción	III Reunión Grupo Especializado de Electricidad y Magnetismo de la RSEF … , 1981	1981

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