Publicaciones Google Scholar de
1980 a
2025
| Título |
Fuente |
Fecha |
| High-pressure sputtering deposition and in situ plasma oxidation of TiOx thin films as electron selective contact for photovoltaic applications |
Materials Science in Semiconductor Processing 186, 109038 , 2025 |
2025 |
| Proton irradiation effects on silicon heterojunction solar cells with MoOx selective contacts |
Materials Science in Semiconductor Processing 190, 109312 , 2025 |
2025 |
| Characterization of Cr implanted GaAs processed with ArF and Nd-YAG laser melting |
Semiconductor Science and Technology 40 (5), 055008 , 2025 |
2025 |
| Native Oxide Layer Role during Cryogenic‐Temperature Ion Implantations in Germanium |
physica status solidi (a) 221 (24), 2400124 , 2024 |
2024 |
| Optoelectronic properties of GaP: Ti photovoltaic devices |
Materials Today Sustainability 28, 101008 , 2024 |
2024 |
| Electrónica en acción |
|
2024 |
| Characterization of TiOx as electron selective contact using low-temperature oxidation process via high-pressure sputtering |
|
2024 |
| Optoelectronic properties of GaP: Ti photovoltaic devices |
Elsevier , 2024 |
2024 |
| Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study |
arXiv e-prints, arXiv: 2401.16502 , 2024 |
2024 |
| Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering |
arXiv e-prints, arXiv: 2402.10925 , 2024 |
2024 |
| Optical, Electrical, and Optoelectronic Characterization of Ti‐Supersaturated Gallium Arsenide |
physica status solidi (a) 221 (24), 2400123 , 2024 |
2024 |
| Fairchild Semiconductors, donde todo empezó en Silicon Valley: La historia de la empresa donde se inventó el primer circuito integrado viable, principal responsable de la … |
Revista Española de Física 38 (2) , 2024 |
2024 |
| Native Oxide Layer Role during Cryogenic-Temperature Ion Implantations in Germanium |
Wiley , 2024 |
2024 |
| El radar en la historia del siglo XX: unas de las armas decisivas de la Segunda Guerra Mundia |
Escolar y Mayo , 2023 |
2023 |
| El primer transistor europeo. Un éxito que pudo ser y no fue. |
Revista Española de Física 37 (3) , 2023 |
2023 |
| Inversion charge study in TMO hole-selective contact-based solar cells |
IEEE Journal of Photovoltaics 13 (5), 656-662 , 2023 |
2023 |
| Fabrication of TiO x , by High Pressure Sputtering for Selective Contact in Photovoltaic Cells |
2023 14th Spanish Conference on Electron Devices (CDE), 1-4 , 2023 |
2023 |
| High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs |
Materials Science in Semiconductor Processing 153, 107191 , 2023 |
2023 |
| High Pressure Sputtering of Mo targets in mixed Ar/O2/H2 atmospheres for hole selective contacts in photovoltaic cells |
|
2023 |
| Ti supersaturated Si by microwave annealing processes |
Semiconductor Science and Technology 38 (2), 024004 , 2023 |
2023 |
| Ti supersaturated Si by microwave annealing processes |
IOP Publishing , 2023 |
2023 |
| Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements |
Semiconductor Science and Technology 38 (3), 034002 , 2023 |
2023 |
| Fabrication of TiOx, by High Pressure Sputtering for Selective Contact in Photovoltaic Cells |
|
2023 |
| Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements |
IOP Publishing , 2023 |
2023 |
| Electrical transport properties in Ge hyperdoped with Te |
Semiconductor Science and Technology 37 (12), 124001 , 2022 |
2022 |
| El 75 aniversario del transistor bipolar:“La invención más importante del siglo xx” |
Revista española de física 36 (3), 4 , 2022 |
2022 |
| Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting |
IOP Publishing , 2022 |
2022 |
| Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells |
Materials science in semiconductor processing 137, 106189 , 2022 |
2022 |
| On the optoelectronic mechanisms ruling Ti‐hyperdoped Si photodiodes |
Advanced Electronic Materials 8 (2), 2100788 , 2022 |
2022 |
| Electrical transport properties in Ge hyperdoped with Te |
Iop Publishing Ltd , 2022 |
2022 |
| Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells |
Elsevier Science Ltd , 2022 |
2022 |
| Los orígenes de la energía solar fotovoltaica |
Investigación y ciencia 551, 44-51 , 2022 |
2022 |
| El 75 aniversario del transistor bipolar.“La invención más importante del siglo xx”. |
Revista Española de Física 36 (3) , 2022 |
2022 |
| Transport mechanisms in hyperdoped silicon solar cells |
Semiconductor Science and Technology 38 (12), 124001 , 2022 |
2022 |
| Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting |
Semiconductor Science and Technology 38 (2), 024001 , 2022 |
2022 |
| Métodos de aprendizaje, evaluación y motivación basados en cuestionarios virtuales y metodologías de clase invertida |
|
2021 |
| High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells |
2021 13th Spanish Conference on Electron Devices (CDE), 12-14 , 2021 |
2021 |
| Aula Virtual de Electrónica |
|
2021 |
| El protagonista silencioso de la revolución digital |
Investigación y ciencia, 52-57 , 2021 |
2021 |
| High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells |
IEEE , 2021 |
2021 |
| Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization |
2021 13th Spanish Conference on Electron Devices (CDE), 1-3 , 2021 |
2021 |
| Integración de la formación teórica y experimental en el área de la Electrónica mediante el desarrollo de una plataforma de demostración del comportamiento real de los … |
|
2020 |
| Energía solar: de la utopía a la esperanza |
Guillermo Escolar Editor , 2020 |
2020 |
| On the properties of GaP supersaturated with Ti |
Journal of Alloys and Compounds 820, 153358 , 2020 |
2020 |
| Los orígenes de la revolución digital: la irrupción de las memorias de semiconductores |
Revista española de física 34 (3), 7-11 , 2020 |
2020 |
| On the properties of GaP supersaturated with Ti |
Elsevier Science SA , 2020 |
2020 |
| Mecanismos de transporte en células solares basadas en heterouniones con silicio |
Universidad Complutense de Madrid , 2019 |
2019 |
| Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer |
Solar energy materials and solar cells 185, 61-65 , 2018 |
2018 |
| William Bradford Shockley |
Revista española de física 31 (4), 56-61 , 2018 |
2018 |
| Microelectrónica: la historia de la mayor revolución silenciosa del siglo XX |
Ediciones Complutense , 2018 |
2018 |
| Microelectrónica: la historia de la mayor revolución silenciosa del siglo XX |
Ediciones Complutense , 2018 |
2018 |
| Strong subbandgap photoconductivity in GaP implanted with Ti |
Progress in Photovoltaics: Research and Applications 26 (3), 214-222 , 2018 |
2018 |
| Strong subbandgap photoconductivity in GaP implanted withTi |
Wiley , 2018 |
2018 |
| Mejora de las Metodologías Docentes para el área de la Electrónica |
|
2018 |
| Vanadium supersaturated silicon system: a theoretical and experimental approach |
Journal of Physics D: Applied Physics 50 (49), 495101 , 2017 |
2017 |
| A robust method to determine the contact resistance using the van der Pauw set up |
Measurement 98, 151-158 , 2017 |
2017 |
| High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation |
Semiconductor Science and Technology 32 (3), 035016 , 2017 |
2017 |
| Vanadium supersaturated silicon system: a theoretical and experimental approach |
Journal of Physics D: Applied Physics 50 (49) , 2017 |
2017 |
| Effects of Gd 2 O 3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs |
IEEE Electron Device Letters 38 (5), 611-614 , 2017 |
2017 |
| Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures |
Journal of Physics D: Applied Physics 49 (27), 275103 , 2016 |
2016 |
| Deposition of Intrinsic a-Si: H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells |
IEEE Journal of Photovoltaics 6 (5), 1059-1064 , 2016 |
2016 |
| Compositional Dependence of Chemical and Electrical Properties in Cu 2 ZnSnS 4 Thin Films |
IEEE Journal of Photovoltaics 6 (4), 990-996 , 2016 |
2016 |
| Electrical characterization of amorphous silicon mis-based structures for hit solar cell applications |
Nanoscale Research Letters 11, 1-7 , 2016 |
2016 |
| Limitations of high pressure sputtering for amorphous silicon deposition |
Materials Research Express 3 (3), 036401 , 2016 |
2016 |
| Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap |
Journal of Physics D: Applied Physics 49 (5), 055103 , 2016 |
2016 |
| Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd 2 O 3 as Gate Dielectric |
IEEE Transactions on Electron Devices 63 (7), 2729-2734 , 2016 |
2016 |
| Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates |
IOP Science , 2015 |
2015 |
| Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications |
Applied Physics Letters 106 (2) , 2015 |
2015 |
| High- k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors |
ACS applied materials & interfaces 7 (1), 62-67 , 2015 |
2015 |
| Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates |
Semiconductor Science and Technology 30 (3), 035023 , 2015 |
2015 |
| High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors |
Amer Chemical Soc. , 2015 |
2015 |
| Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd 2 O 3 as gate dielectric |
2015 10th Spanish Conference on Electron Devices (CDE), 1-4 , 2015 |
2015 |
| Meyer Neldel rule application to silicon supersaturated with transition metals |
Journal of Physics D: Applied Physics 48 (7), 075102 , 2015 |
2015 |
| Amorphous/crystalline silicon interface characterization by capacitance and conductance measurements |
2015 10th Spanish Conference on Electron Devices (CDE), 1-4 , 2015 |
2015 |
| A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications |
Journal of Applied Physics 118 (24) , 2015 |
2015 |
| Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering |
Thin Solid Films 593, 62-66 , 2015 |
2015 |
| High pressure sputtering for high-k dielectric deposition. Is it worth trying |
ECS Transactions 61 (2), 27 , 2014 |
2014 |
| Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector |
Applied Physics Letters 104 (21) , 2014 |
2014 |
| High pressure sputtering for kigh-k dielectric deposition. Is it worth trying? |
IOP Science , 2014 |
2014 |
| Growth and interface engineering of highly strained low bandgap group IV semiconductors |
2014 7th International Silicon-Germanium Technology and Device Meeting … , 2014 |
2014 |
| Multiphononon resonant Raman scattering in He+-implanted InGaN |
Semiconductor Science and Technology 29 (4), 045013 , 2014 |
2014 |
| Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric |
Telecomunicacion , 2014 |
2014 |
| Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes |
2013 Spanish Conference on Electron Devices, 285-288 , 2013 |
2013 |
| Electrical decoupling effect on intermediate band Ti-implanted silicon layers |
Journal of Physics D: Applied Physics 46 (13), 135108 , 2013 |
2013 |
| Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells |
2013 Spanish Conference on Electron Devices, 337-340 , 2013 |
2013 |
| Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells |
Japanese Journal of Applied Physics 52 (12R), 122302 , 2013 |
2013 |
| Towards high-k integration with III-V channels: Interface optimization of high pressure sputtered gadolinium oxide on indium phospide |
2013 Spanish Conference on Electron Devices, 25-28 , 2013 |
2013 |
| Física y Energía |
Revista Española de Física 27 (2), 1 , 2013 |
2013 |
| Células solares de banda intermedia |
Revista española de física 27 (2), 20-22 , 2013 |
2013 |
| Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material |
2013 Spanish Conference on Electron Devices, 377-380 , 2013 |
2013 |
| Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics |
Semiconductor science and technology 28 (8), 085004 , 2013 |
2013 |
| Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon |
AVS Amer Inst. Physics , 2013 |
2013 |
| The intermediate band approach in the third solar cell generation context |
2013 Spanish Conference on Electron Devices, 297-300 , 2013 |
2013 |
| Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon |
Journal of Vacuum Science & Technology B 31 (1) , 2013 |
2013 |
| Double ion implantation and pulsed laser melting processes for third generation solar cells |
International Journal of Photoenergy 2013 (1), 473196 , 2013 |
2013 |
| Electrical decoupling effect on intermediate band Ti-implanted silicon layers |
IOP Publishing LTD , 2013 |
2013 |
| High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments |
Microelectronic engineering 109, 223-226 , 2013 |
2013 |
| Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric |
2013 Spanish Conference on Electron Devices, 5-8 , 2013 |
2013 |
| Study of the electrical behavior in Intermediate Band-Si junctions |
MRS Online Proceedings Library (OPL) 1493, 85-90 , 2013 |
2013 |
| Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation |
Microelectronic engineering 109, 236-239 , 2013 |
2013 |
| Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells |
IEEE , 2013 |
2013 |
| Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si |
American Institute of Physics , 2013 |
2013 |
| Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si |
Journal of Applied Physics 114 (5) , 2013 |
2013 |
| Towards a new generation of solar cells: silicon supersaturated with titanium or vanadium |
Telecomunicacion , 2013 |
2013 |
| Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering |
Journal of Vacuum Science & Technology B 31 (1) , 2013 |
2013 |
| The intermediate band approach in the third solar cell generation context |
IEEE , 2013 |
2013 |
| Interface quality of Sc2O3 and Gd2O3 films based metal–insulator–silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes |
Journal of Vacuum Science & Technology B 31 (1) , 2013 |
2013 |
| Intermediate band solar cells. The transition metal supersaturated Silicon approach |
Telecomunicacion , 2013 |
2013 |
| Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon |
Applied Physics Letters 103 (3) , 2013 |
2013 |
| The Intermediate Band approach in the third solar cell generation context |
Proceedings of the 2013 Spanish Conference on Electron Devices, 75 , 2013 |
2013 |
| High pressure sputtering as a viable technique for future high permittivity dielectric on III–V integration: GdOx on InP demonstration |
Journal of Vacuum Science & Technology B 31 (1) , 2013 |
2013 |
| Gadolinium scandate by high pressure sputtering as a high-k dielectric |
2013 Spanish Conference on Electron Devices, 17-20 , 2013 |
2013 |
| Gadolinium scandate by high pressure sputtering as a high-k dielectric |
Proceedings of the 2013 Spanish Conference on Electron Devices, 5 , 2013 |
2013 |
| Sub-bandgap spectral photo-response analysis of Ti supersaturated Si |
Applied Physics Letters 101 (19) , 2012 |
2012 |
| Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon |
Solar Energy Materials and Solar Cells 104, 159-164 , 2012 |
2012 |
| Interstitial Ti for intermediate band formation in Ti-supersaturated silicon |
Journal of Applied Physics 112 (11) , 2012 |
2012 |
| Ion implant technology for intermediate band solar cells |
Next Generation of Photovoltaics: New Concepts, 321-346 , 2012 |
2012 |
| Ion implantation and pulsed laser melting processing for the development of an intermediate band material |
AIP Conference Proceedings 1496 (1), 54-57 , 2012 |
2012 |
| Low temperature intermediate band metallic behavior in Ti implanted Si |
Thin Solid Films 520 (21), 6614-6618 , 2012 |
2012 |
| Optimization of scandium oxide growth by high pressure sputtering on silicon |
Thin Solid Films 526, 81-86 , 2012 |
2012 |
| Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs |
IEEE Transactions on Device and Materials Reliability 12 (1), 166-170 , 2012 |
2012 |
| Montaje y optimización de un sistema de pulverización catódica de alta presión de silicio amorfo hidrogenado (Assembly and optimizatión of a high pressure sputtering system for … |
|
2012 |
| Low temperature intermediate band metallic behavior in Ti implanted Si |
Elsevier Science SA , 2012 |
2012 |
| Optimization of scandium oxide growth by high pressure sputtering on silicon |
Elsevier , 2012 |
2012 |
| METHOD FOR MANUFACTURING A LATERAL INTERMEDIATE-BAND SOLAR CELL |
WO Patent 2,012,072,839 , 2012 |
2012 |
| Sub-bandgap absorption in Ti implanted Si over the Mott limit |
Journal of Applied Physics 109 (11) , 2011 |
2011 |
| Positive bias temperature instabilities on sub-nanometer EOT FinFETs |
Microelectronics Reliability 51 (9-11), 1521-1524 , 2011 |
2011 |
| Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering |
Microelectronic engineering 88 (9), 2991-2996 , 2011 |
2011 |
| Insulator-metallic transition in Ti implanted silicon layers for Intermediate Band |
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 1-4 , 2011 |
2011 |
| Two-layer Hall effect model for intermediate band Ti-implanted silicon |
Journal of Applied Physics 109 (6) , 2011 |
2011 |
| Interface engineering by metal electrode scavenging of Gd 2 O 3 films sputtered on Si |
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 1-4 , 2011 |
2011 |
| Depth profile study of Ti implanted Si at very high doses |
Journal of Applied Physics 110 (6) , 2011 |
2011 |
| Track: Materials and process technology |
|
2011 |
| UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation |
Semiconductor science and technology 26 (11), 115003 , 2011 |
2011 |
| Electrical characterization of high-pressure reactive sputtered ScOx films on silicon |
Thin Solid Films 519 (7), 2268-2272 , 2011 |
2011 |
| Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study |
Microelectronic engineering 88 (7), 1357-1360 , 2011 |
2011 |
| Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering |
Elsevier , 2011 |
2011 |
| Caracterización eléctrica de diodos Si realizados mediante implantación ionica. |
Revista española de física 16 (2) , 2011 |
2011 |
| Visible and UV Raman scattering study of lattice recovery on Ti implanted silicon layers |
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 1-4 , 2011 |
2011 |
| Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications |
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 1-3 , 2011 |
2011 |
| Thermal stability of intermediate band behavior in Ti implanted Si |
Solar energy materials and solar cells 94 (11), 1907-1911 , 2010 |
2010 |
| Nitridation of Si by N [sub 2] Electron Cyclotron Resonance Plasma and Integration with ScO [sub x] Deposition |
Journal of The Electrochemical Society 157 (4) , 2010 |
2010 |
| Electrical Characterization of High-Pressure Reactive Sputtered Sc2O3 Films on Silicon |
ECS Transactions 28 (1), 287 , 2010 |
2010 |
| Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks |
Journal of Applied Physics 107 (11) , 2010 |
2010 |
| Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties |
Journal of Applied Physics 107 (8) , 2010 |
2010 |
| High quality Ti-implanted Si layers above the Mott limit |
Journal of Applied Physics 107 (10) , 2010 |
2010 |
| Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties |
American Institute of Physics , 2010 |
2010 |
| METHOD FOR THE PRODUCTION OF A SILICON SOLAR CELL WITH AN INTERMEDIATE BAND |
WO Patent 2,010,094,817 , 2010 |
2010 |
| High quality Ti-implanted Si layers above the Mott limit |
American Institute of Physics , 2010 |
2010 |
| Nitridation of Si by N2 electron cyclotron resonance plasma and integration with ScOx deposition |
Journal of The Electrochemical Society 157 (4), H430 , 2010 |
2010 |
| Laser thermal annealing effects on single crystal gallium phosphide |
Journal of Applied Physics 106 (5) , 2009 |
2009 |
| Interfacial Properties of HfO 2 / SiN/Si Gate Structures |
2009 Spanish Conference on Electron Devices, 23-26 , 2009 |
2009 |
| High Quality Ti-Implanted Si Layers Above Solid Solubility Limit |
IEEE , 2009 |
2009 |
| Intermediate band mobility in heavily titanium-doped silicon layers |
Solar Energy Materials and Solar Cells 93 (9), 1668-1673 , 2009 |
2009 |
| Pulsed laser melting effects on single crystal gallium phosphide |
2009 Spanish Conference on Electron Devices, 42-45 , 2009 |
2009 |
| High quality Ti-implanted Si layers above solid solubility limit |
2009 Spanish Conference on Electron Devices, 38-41 , 2009 |
2009 |
| ToF-SIMS Study of Pulsed Laser Melting Energy Density on Ti Implanted Si for Intermediate Band |
MRS Online Proceedings Library (OPL) 1210, 1210-Q08-16 , 2009 |
2009 |
| Ti-doped gallium phosphide layers with concentrations above the Mott limit |
MRS Online Proceedings Library (OPL) 1210, 1210-Q03-17 , 2009 |
2009 |
| Growth of Silicon Nitride on Silicon by Electron Cyclotron Resonance Plasma Nitridation |
2009 Spanish Conference on Electron Devices, 16-18 , 2009 |
2009 |
| Electronic transport properties of Ti-impurity band in Si |
Journal of Physics D: Applied Physics 42 (8), 085110 , 2009 |
2009 |
| Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material |
Applied Physics Letters 94 (4) , 2009 |
2009 |
| Raman and Rutherford Backscattering characterization of Ti-implanted Si above the Mott limit |
MRS Online Proceedings Library (OPL) 1210, 1210-Q04-10 , 2009 |
2009 |
| Physical properties of high pressure reactively sputtered hafnium oxide |
Vacuum 82 (12), 1391-1394 , 2008 |
2008 |
| Physical properties of high pressure reactively sputtered hafnium oxide |
Pergamon-Elsevier Science Ltd , 2008 |
2008 |
| New developments in charge pumping measurements on thin stacked dielectrics |
IEEE transactions on electron devices 55 (11), 3184-3191 , 2008 |
2008 |
| Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon |
Journal of Applied Physics 104 (9) , 2008 |
2008 |
| Trapping in 1nm EOT high-k/MG |
ECS Transactions 16 (5), 77 , 2008 |
2008 |
| Titanium doped silicon layers with very high concentration |
Journal of Applied Physics 104 (1) , 2008 |
2008 |
| Reliability of strained-Si devices with post-oxide-deposition strain introduction |
IEEE transactions on electron devices 55 (12), 3432-3441 , 2008 |
2008 |
| Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2 |
Amer Inst Physics , 2007 |
2007 |
| Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection |
Microelectronic engineering 84 (9-10), 1943-1946 , 2007 |
2007 |
| A reliable metric for mobility extraction of short-channel MOSFETs |
IEEE transactions on electron devices 54 (10), 2690-2698 , 2007 |
2007 |
| High-pressure reactively sputtered HfO2: composition, morphology, and optical properties |
Journal of Applied Physics 102 (4) , 2007 |
2007 |
| Optical spectroscopic study of the SiN∕ HfO2 interfacial formation during rf sputtering of HfO2 |
Applied Physics Letters 91 (19) , 2007 |
2007 |
| Accurate Gate Impedance Determination on Ultraleaky MOSFETs by Fitting to a Three-Lumped-Parameter Model atFrequencies From DC to RF |
IEEE transactions on electron devices 54 (7), 1705-1712 , 2007 |
2007 |
| Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering |
Journal of Physics D: Applied Physics 40 (17), 5256 , 2007 |
2007 |
| Mobility extraction using RFCV for 80 nm MOSFET with 1 nm EOT HfSiON/TiN |
Microelectronic engineering 84 (9-10), 1878-1881 , 2007 |
2007 |
| Advanced electrical characterization toward (sub) 1nm EOT HfSiON-hole trapping in PFET and L-dependent effects |
2007 IEEE Symposium on VLSI Technology, 32-33 , 2007 |
2007 |
| Optical spectroscopic study of the SiN |
Applied physics letters 91 (19) , 2007 |
2007 |
| High-k characterization by RFCV |
|
2007 |
| Negligible effect of process-induced strain on intrinsic NBTI behavior |
IEEE electron device letters 28 (3), 242-244 , 2007 |
2007 |
| Line width dependent mobility in high-k a comparative performance study between FUSI and TiN |
2007 International Symposium on VLSI Technology, Systems and Applications … , 2007 |
2007 |
| High-k characterization by RFCV |
ECS Transactions 11 (4), 363 , 2007 |
2007 |
| Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics |
Semiconductor science and technology 22 (12), 1344 , 2007 |
2007 |
| High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties |
American Institute of Physics , 2007 |
2007 |
| Performance assessment of (1 1 0) p-FET high-κ/MG: is it mobility or series resistance limited? |
Microelectronic engineering 84 (9-10), 2058-2062 , 2007 |
2007 |
| Isotopic study of the nitrogen-related modes in N+-implanted ZnO |
Applied physics letters 90 (18) , 2007 |
2007 |
| Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios |
Materials science in semiconductor processing 9 (6), 1020-1024 , 2006 |
2006 |
| Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis |
Thin solid films 515 (2), 695-699 , 2006 |
2006 |
| Raman Scattering Characterization of Implanted ZnO |
MRS Online Proceedings Library (OPL) 957, 0957-K07-24 , 2006 |
2006 |
| Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios |
Materials Science in Semiconductor Processing 9, 1020-1024 , 2006 |
2006 |
| Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis |
Elsevier Science SA , 2006 |
2006 |
| RF split capacitance–voltage measurements of short-channel and leaky MOSFET devices |
IEEE electron device letters 27 (9), 772-774 , 2006 |
2006 |
| Optimization of Sub-Melt Laser Anneal: Performance and Reliability |
2006 International Electron Devices Meeting , 2006 |
2006 |
| Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis |
Elsevier , 2006 |
2006 |
| Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O-2 ratios |
Elsevier Science Ltd , 2006 |
2006 |
| Optimization of sub-melt laser anneal: performance and reliability |
2006 International Electron Devices Meeting, 1-4 , 2006 |
2006 |
| NBTI study on PMOS devices with TiN/HfO2 gate stack and process induced strain |
ECS transactions 3 (2), 253 , 2006 |
2006 |
| Physical properties of high pressure reactively sputtered TiO2 |
AVS Amer. Inst. Physics , 2005 |
2005 |
| Oxygen to silicon ratio determination of SiOxHy thin films |
Thin solid films 492 (1-2), 232-235 , 2005 |
2005 |
| On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD |
Microelectronics Reliability 45 (5-6), 978-981 , 2005 |
2005 |
| Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon |
Conference on Electron Devices, 2005 Spanish, 49-52 , 2005 |
2005 |
| A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition |
Semiconductor science and technology 20 (10), 1044 , 2005 |
2005 |
| Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon |
IEEE , 2005 |
2005 |
| Physical properties of high pressure reactively sputtered TiO2 |
Journal of Vacuum Science & Technology A 23 (6), 1523-1530 , 2005 |
2005 |
| Oxygen to silicon ratio determination of SiOXHY thin films |
Elsevier Science SA , 2005 |
2005 |
| On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD |
Pergamon-Elsevier Science Ltd. , 2005 |
2005 |
| A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition |
Iop Publishing Ltd , 2005 |
2005 |
| Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiO2/SiNx and SiOxNy Dielectric Films on Silicon … |
Japanese journal of applied physics 43 (1R), 66 , 2004 |
2004 |
| Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices |
Iop Publishing Ltd , 2004 |
2004 |
| Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada |
BOLETIN-SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO 43 (2), 386-389 , 2004 |
2004 |
| Procesos de oxidación de Si mediante plasma de resonancia ciclotrónica de electrones |
Sociedad Española de Cerámica y Vidrio , 2004 |
2004 |
| Fabricación y caracterización de dieléctricos de alta permitividad para su aplicación como aislantes de puerta en dispositivos mis |
Fabricación y caracterización de dieléctricos de alta permitividad para su … , 2004 |
2004 |
| Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method |
Thin Solid Films 459 (1-2), 203-207 , 2004 |
2004 |
| Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon … |
Inst. Pure Applied Physics , 2004 |
2004 |
| Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method |
Elsevier , 2004 |
2004 |
| Hydrogenated polycrystalline SiGe films and their application in Thin Film Transistors |
BOLETIN DE LA SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO 43 (2), 386-389 , 2004 |
2004 |
| Influence of H on the composition and atomic concentrations of “N-rich” plasma deposited films |
Journal of applied physics 95 (10), 5373-5382 , 2004 |
2004 |
| Influence of H on the composition and atomic concentrations of" N-rich" plasma deposited SiOxNyHz films |
American Institute of Physics , 2004 |
2004 |
| Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method |
Elsevier Science SA , 2004 |
2004 |
| Si oxidation processes by electron cyclotron resonance plasmas |
BOLETIN DE LA SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO 43 (2), 379-382 , 2004 |
2004 |
| Compositional analysis of thin SiOxNy: H films by heavy-ion ERDA, standard RBS, EDX and AES: a comparison |
Elsevier , 2004 |
2004 |
| Procesos de oxidación de Si mediante plasma de resonancia ciclotrónica de electrones |
Boletín de la Sociedad Española de Cerámica y Vidrio 43 (2), 379-382 , 2004 |
2004 |
| Compositional analysis of thin SiOxNy: H films by heavy-ion ERDA, standard RBS, EDX and AES: a comparison |
Nuclear Instruments and Methods in Physics Research Section B: Beam … , 2004 |
2004 |
| Shpilevskiy, EM, 254 Sikola, T., 17 Šiljegovic, M., 23 ˇ |
Thin Solid Films 459, 323-324 , 2004 |
2004 |
| Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada |
Sociedad Española de Cerámica y Vidrio , 2004 |
2004 |
| Rapid thermally annealed plasma deposited thin films: Application to metal–insulator–semiconductor structures with Si, and InP |
Journal of applied physics 94 (4), 2642-2653 , 2003 |
2003 |
| Optical and structural properties of films deposited by electron cyclotron resonance and their correlation with composition |
Journal of applied physics 93 (11), 8930-8938 , 2003 |
2003 |
| A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide |
Kluwer Academic Publ. , 2003 |
2003 |
| Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators |
AVS Amer Inst. Physics , 2003 |
2003 |
| Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method |
American Institute of Physics , 2003 |
2003 |
| Optical and structural properties of SiO x N y H z films deposited by electron cyclotron resonance and their correlation with composition |
Journal of Applied Physics 93 (11), 8930-8938 , 2003 |
2003 |
| Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films |
Journal of Materials Science: Materials in Electronics 14, 287-290 , 2003 |
2003 |
| A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide |
Journal of Materials Science: Materials in Electronics 14, 375-378 , 2003 |
2003 |
| Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer … , 2003 |
2003 |
| Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices |
Semiconductor science and technology 19 (2), 133 , 2003 |
2003 |
| Bonding configuration and density of defects of thin films deposited by the electron cyclotron resonance plasma method |
Journal of Applied Physics 94 (12), 7462-7469 , 2003 |
2003 |
| Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing |
Journal of applied physics 93 (11), 9019-9023 , 2003 |
2003 |
| Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition |
American Institute of Physics , 2003 |
2003 |
| Microstructural modifications induced by rapid thermal annealing in plasma deposited films |
Journal of applied physics 94 (2), 1019-1029 , 2003 |
2003 |
| Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films |
American Institute of Physics , 2003 |
2003 |
| Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films |
Kluwer Academic Publ. , 2003 |
2003 |
| Interfacial state density and conductance-transient three-dimensional profiling of disordered-induced gap states on metal insulator semiconductor capacitors fabricated from … |
Japanese journal of applied physics 42 (8R), 4978 , 2003 |
2003 |
| Rapid thermally annealed plasma deposited SiNx: H thin films: Application to metal-insulator-semiconductor structures with Si, In0. 53Ga0. 47As, and InP |
American Institute of Physics , 2003 |
2003 |
| Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique |
Semiconductor science and technology 18 (7), 633 , 2003 |
2003 |
| Conductance transient comparative analysis of ECR-PECVD deposited SiNx, SiO2/SiNx and SiOxNy dielectric films on silicon substrates |
MRS Online Proceedings Library (OPL) 786, E3. 12 , 2003 |
2003 |
| Physical properties of plasma deposited SiOx thin films |
Vacuum 67 (3-4), 525-529 , 2002 |
2002 |
| Experimental verification of the physics and structure of the bipolar junction transistor |
IEEE Transactions on Education 41 (3), 224-228 , 2002 |
2002 |
| Improvement of SiNx: H/InP gate structures for the fabrication of metal–insulator–semiconductor field-effect transistors |
Semiconductor science and technology 17 (7), 672 , 2002 |
2002 |
| Compositional analysis of SiOxNy: H films by heavy-ion ERDA: the problem of radiation damage |
John Wiley & Sons Ltd. , 2002 |
2002 |
| Compositional analysis of SiO x N y :H films by heavy‐ion ERDA: the problem of radiation damage |
Surface and Interface Analysis: An International Journal devoted to the … , 2002 |
2002 |
| S. HERNÁNDEZ, R. CUSCÓ, and L. ARTÚS |
Silicon-based Heterostructure Materials: Proceedings of the Symposium D of … , 2002 |
2002 |
| Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx: H films |
American Institute of Physics , 2002 |
2002 |
| Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance |
Pergamon-Elsevier Science Ltd. , 2002 |
2002 |
| Rapid thermal annealing effects on plasma deposited SiOx: H films |
Pergamon-Elsevier Science Ltd. , 2002 |
2002 |
| Physical properties of plasma deposited SiOx thin films |
Pergamon-Elsevier Science Ltd. , 2002 |
2002 |
| Rapid thermal annealing effects on plasma deposited SiOx: H films |
Vacuum 67 (3-4), 531-536 , 2002 |
2002 |
| Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance |
Vacuum 67 (3-4), 507-512 , 2002 |
2002 |
| Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments |
International Journal of Modern Physics B 16 (28n29), 4401-4404 , 2002 |
2002 |
| Thermally induced modifications on bonding configuration and density of defects of plasma deposited films |
Journal of applied physics 92 (4), 1906-1913 , 2002 |
2002 |
| Day, SR, 301 de la L. Olvera, M., 242 Donnelly, K., 102 Dowling, DP, 102 |
Thin Solid Films 394, 304 , 2001 |
2001 |
| Electrical Characterization of Al/SiNx: H/n and p-In0. 53Ga0. 47As Structures by Deep-Level Transient Spectroscopy and Conductance Transient Techniques |
Japanese Journal of Applied Physics 40 (7R), 4479 , 2001 |
2001 |
| Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx: H/Si devices |
American Institute of Physics , 2001 |
2001 |
| C–V, DLTS and conductance transient characterization of SiN x :H/InP interface improved by N 2 remote plasma cleaning of the InP surface |
Journal of Materials Science: Materials in Electronics 12, 263-267 , 2001 |
2001 |
| Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Molecular models and activation energies for bonding rearrangement in plasma-deposited a-SiNc: H … |
Physical Review-Section B-Condensed Matter 63 (24), 245320-245320 , 2001 |
2001 |
| Molecular models and activation energies for bonding rearrangement in plasma-deposited dielectric thin films treated by rapid thermal annealing |
Physical Review B 63 (24), 245320 , 2001 |
2001 |
| Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of structures |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer … , 2001 |
2001 |
| Effect of Dielectric Layers on the Performance of AlGaN‐Based UV Schottky Photodiodes |
physica status solidi (a) 188 (1), 307-310 , 2001 |
2001 |
| Molecular models and activation energies for bonding rearrangement in plasma-deposited α-SiNx: H dielectric thin films treated by rapid thermal annealing |
Physical Review B-Condensed Matter and Materials Physics 63 (24), 2453201 … , 2001 |
2001 |
| Characterization of polycrystalline Cu (In, Ga) Te2 thin films prepared by pulsed laser deposition |
Thin Solid Films 394 (1-2), 23-28 , 2001 |
2001 |
| Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures |
MRS Online Proceedings Library (OPL) 699, R4. 4 , 2001 |
2001 |
| C-V, DLTS and conductance transient characterization of\hbox {SiN} _ {x}\,{\bf:}\,\hbox {H/InP} interface improved by\hbox {N} _ {2} remote plasma cleaning of the InP surface |
Journal of Materials Science: Materials in Electronics 12 (4-6), 263-267 , 2001 |
2001 |
| Electrical propertiesof rapid thermally annealed SiNx: H/Si structurescharacterized by capacitance-voltage and surface photovoltagespectroscopy |
Semiconductor science and technology 16 (7), 534 , 2001 |
2001 |
| Molecular models and activation energies for bonding rearrangement in plasma-deposited (formula presented) dielectric thin films treated by rapid thermal annealing |
Physical Review B-Condensed Matter and Materials Physics 63 (24) , 2001 |
2001 |
| Temperature effects on the electrical properties and structure of interfacial and bulk defects in devices |
Journal of Applied Physics 90 (3), 1573-1581 , 2001 |
2001 |
| N2 remote plasma cleaning of InP to improve SiNx: H/InP interface performance |
Microelectronics Reliability 40 (4-5), 837-840 , 2000 |
2000 |
| Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx: H/InP and Al/SiNx: H/In0. 53Ga0. 47As structures by DLTS and conductance transient … |
Microelectronics Reliability 40 (4-5), 845-848 , 2000 |
2000 |
| Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx: H films deposited by electron cyclotron resonance |
American Institute of Physics , 2000 |
2000 |
| Defect structure of SiNx: H films and its evolution with annealing temperature |
Journal of Applied Physics 88 (4), 2149-2151 , 2000 |
2000 |
| Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx: H/InP metal-insulator-semiconductor structures |
Japanese Journal of Applied Physics 39 (11R), 6212 , 2000 |
2000 |
| STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Rapid thermal annealing effects on the structural properties and density of … |
Journal of Applied Physics 87 (3), 1187-1192 , 2000 |
2000 |
| High-quality Si-implanted epitaxial layers and their application to junction devices |
Journal of Applied Physics 87 (7), 3478-3482 , 2000 |
2000 |
| Rapid thermal annealing effects on the structural properties and density of defects in and films deposited by electron cyclotron resonance |
Journal of Applied Physics 87 (3), 1187-1192 , 2000 |
2000 |
| Comparison between n-type and p-type Al/SiNx: H/In0. 53Ga0. 47As devices deposited byelectron cyclotron resonance technique |
Semiconductor science and technology 15 (8), 823 , 2000 |
2000 |
| Compositional analysis of amorphous SiN x : H films by ERDA and infrared spectroscopy |
Surface and Interface Analysis: An International Journal devoted to the … , 2000 |
2000 |
| Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride A1/SiNx: H/InP and A1/SiNx: H/in0. 53Ga0. 47As structures by DLTS and conductance transient … |
Microelectronics Reliability 40 (4-5), 845-848 , 2000 |
2000 |
| Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry |
Thin Solid Films 349 (1-2), 135-146 , 1999 |
1999 |
| Electronic Materials and Processing/Plasma Science and Technology/Selected Energy Epitaxy-Plasma Processing of Compound Semiconductors-Thermally induced improvements on SINx: H … |
Journal of Vacuum Science and Technology-Section A-Vacuum Surfaces and Films … , 1999 |
1999 |
| Thermal stability of films deposited by plasma electron cyclotron resonance |
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (4 … , 1999 |
1999 |
| Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealing |
Thin solid films 343, 433-436 , 1999 |
1999 |
| Growth and characterization of Cu x Ag 1-x InSe 2 thin films by pulsed laser deposition |
Diffusion and Defect Data Pt. B: Solid State Phenomena, 361-366 , 1999 |
1999 |
| Thermally induced changes in the optical properties of films deposited by the electron cyclotron resonance plasma method |
Journal of applied physics 86 (4), 2055-2061 , 1999 |
1999 |
| Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced metal–insulator–semiconductor structures … |
Journal of Applied Physics 86 (12), 6924-6930 , 1999 |
1999 |
| Optical-constant calculation of non-uniform thickness thin films of the Ge10As15Se75 chalcogenide glassy alloy in the sub-band-gap region (0.1–1.8 eV) |
Materials chemistry and physics 60 (3), 231-239 , 1999 |
1999 |
| Low interface trap density in rapid thermally annealed metal–insulator–semiconductor devices |
Applied physics letters 74 (7), 991-993 , 1999 |
1999 |
| Thermally induced improvements on devices |
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (4 … , 1999 |
1999 |
| Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality\hbox {Al/SiN} _ {x}\hbox {/InP} MIS structure fabrication |
Journal of Materials Science: Materials in Electronics 10 (5-6), 373-377 , 1999 |
1999 |
| Effect of substrate temperature in films deposited by electron cyclotron resonance |
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (4 … , 1999 |
1999 |
| Gate quality of ex situ deposited Al/SiNx: H/n-In0. 53Ga0. 47As devices after rapid thermal annealing |
Semiconductor science and technology 14 (7), 628 , 1999 |
1999 |
| STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Thermally induced changes in the optical properties of SiNx: H films … |
Journal of Applied Physics 86 (4), 2055-2061 , 1999 |
1999 |
| Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature |
Thin Solid Films 343, 437-440 , 1999 |
1999 |
| ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)-Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx: H/InP |
Journal of Applied Physics 86 (12), 6924-6930 , 1999 |
1999 |
| Good quality metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method |
Journal of applied physics 83 (1), 600-603 , 1998 |
1998 |
| Conductance Transients Study of Slow Traps in Al/SiN₁: H/Si and |
Electrically Based Microstructural Characterization II: Volume 500 2, 87 , 1998 |
1998 |
| Dependence of the physical properties of SiNx: H films deposited by the ECR plasma method on the discharge size |
Thin solid films 315 (1-2), 22-28 , 1998 |
1998 |
| Deposition of thin films by the electron cyclotron resonance and its application to structures |
Journal of applied physics 83 (1), 332-338 , 1998 |
1998 |
| Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method |
Thin solid films 317 (1-2), 116-119 , 1998 |
1998 |
| Influence of rapid thermal annealing processes on the properties of SiNx: H films deposited by the electron cyclotron resonance method |
Journal of non-crystalline solids 227, 523-527 , 1998 |
1998 |
| A laboratory experiment with blue light-emitting diodes |
American Journal of Physics 65 (5), 371-376 , 1997 |
1997 |
| The influence of film properties on the electrical characteristics of metal-insulator-semiconductor devices |
Semiconductor science and technology 12 (12), 1650 , 1997 |
1997 |
| Analysis of light-emission processes in light-emitting diodes and semiconductor lasers |
European Journal of Physics 18 (2), 63 , 1997 |
1997 |
| Conductance transients study of slow traps in Al/SiNx: H/Si and Al/SiNx: H/InP metal-insulator-semiconductor structures |
MRS Online Proceedings Library (OPL) 500, 87 , 1997 |
1997 |
| Experimental observation of conductance transients in metal-insulator-semiconductor structures |
Applied physics letters 71 (6), 826-828 , 1997 |
1997 |
| Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III–V nitrides |
Journal of applied physics 81 (5), 2442-2444 , 1997 |
1997 |
| Láminas delgadas aislantes derivadas del silicio depositado mediante la técnica ECR-CVD |
Boletín de la Sociedad Española de Cerámica y Vidrio 36 (2), 264-270 , 1997 |
1997 |
| Insulating thin films based on Si deposited by ECR-CVD |
BOLETIN-SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO 36, 264-270 , 1997 |
1997 |
| An undergraduate experiment: The determination of the structure of Ge and Si based bipolar transistors |
International journal of electrical engineering education 34 (1), 16-28 , 1997 |
1997 |
| El quincuagésimo aniversario del transistor |
Revista española de física 11 (2), 16-20 , 1997 |
1997 |
| DC characterization of fully ion-implanted pn junctions into semi-insulating InP |
IEEE Transactions on Electron Devices 43 (3), 396-401 , 1996 |
1996 |
| Properties of a-SiN x .: H films deposited at room temperature by the electron cyclotron resonance plasma method |
Philosophical Magazine B 73 (3), 487-502 , 1996 |
1996 |
| The physics of PN junctions in laboratory; La fisica de la union PN en el laboratorio |
Revista Española de Física 9 , 1995 |
1995 |
| Electrical and optical characterization of Mg, Mg/P, and Mg/Ar implants into InP: Fe |
Journal of electronic materials 24, 59-67 , 1995 |
1995 |
| Analysis of the oxygen contamination present in SiN x films deposited by electron cyclotron resonance |
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13 (3 … , 1995 |
1995 |
| La física de la unión PN en el laboratorio |
Revista española de física 9 (1), 39-43 , 1995 |
1995 |
| Deep‐level transient spectroscopy and electrical characterization of ion‐implanted p ‐ n junctions into undoped InP |
Journal of applied physics 78 (9), 5325-5330 , 1995 |
1995 |
| Influence of the deposition parameters on the bonding and optical properties of SiNx ECR films |
Journal of non-crystalline solids 187, 329-333 , 1995 |
1995 |
| Role of oxygen on the dangling bond configuration of low oxygen content SiN x :H films deposited at room temperature |
Applied physics letters 67 (22), 3263-3265 , 1995 |
1995 |
| Growth of chalcopyrite Cu(In,Ga)Se 2 /CuIn 3 Se 5 absorbers by radio frequency sputtering |
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13 (3 … , 1995 |
1995 |
| Electrical and optical characterisation of silicon and silicon/phosphorus implantsin InP doped with iron |
Materials science and technology 11 (11), 1203-1206 , 1995 |
1995 |
| RTA of SI implantations into semi-insulating INP |
Anales de Fisica (1992);(Spain) 90 (1) , 1994 |
1994 |
| Photoluminescence and electrical characterization of shallow Mg, Mg/Ar and Mg/P implants into InP: Fe |
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide … , 1994 |
1994 |
| Optical characterization of silicon nitride films deposited by ECR-CVD |
Vacuum 45 (10-11), 1027-1028 , 1994 |
1994 |
| Stoichiometry control over a wide composition range of sputtered CuGa x In (1− x ) Se 2 |
Applied physics letters 64 (10), 1239-1241 , 1994 |
1994 |
| Capacitance measurements of pn junctions: depletion layer and diffusion capacitance contributions |
European journal of physics 14 (2), 86 , 1993 |
1993 |
| Emission line intensities in an rf sputtering glow discharge system |
Thin solid films 228 (1-2), 133-136 , 1993 |
1993 |
| Optical spectroscopic study of the growth dynamics of radio‐frequency‐sputtered YBa 2 Cu 3 O 7− x thin films |
Applied physics letters 61 (2), 231-233 , 1992 |
1992 |
| Determination of the dark and illuminated characteristic parameters of a solar cell from IV characteristics |
European journal of physics 13 (4), 193 , 1992 |
1992 |
| Optical analysis of absorbing thin films: application to ternary chalcopyrite semiconductors |
Applied optics 31 (10), 1606-1611 , 1992 |
1992 |
| Undergraduate laboratory experiment: Measurement of the complex refractive index and the band gap of a thin film semiconductor |
American Journal of Physics 60 (1), 83-86 , 1992 |
1992 |
| Chalcopyrite CuGa x In 1− x Se 2 semiconducting thin films produced by radio frequency sputtering |
Applied physics letters 60 (15), 1875-1877 , 1992 |
1992 |
| A laboratory experiment for DC characterization of pn devices |
European Journal of Physics 12 (3), 149 , 1991 |
1991 |
| Electrical characterization of all-sputtered CdS/CuInSe2 solar cell heterojunctions |
Solar cells 28 (1), 31-39 , 1990 |
1990 |
| Growth and Physical Properties of CuGaSe 2 Thin Films by R. F. Sputtering |
Journal of materials science letters 9 (2), 237-240 , 1990 |
1990 |
| Structural, electrical, and optical properties of CuGaSe 2 rf sputtered thin films |
Journal of applied physics 68 (1), 189-194 , 1990 |
1990 |
| Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe 2 /CdS solar cell heterojunctions |
Journal of applied physics 65 (8), 3236-3241 , 1989 |
1989 |
| Substrate temperature effect on the optical properties of radio‐frequency sputtered CuInSe 2 thin films |
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 … , 1989 |
1989 |
| Influence of interface states on the electrical characteristics of all-sputtered CuxS/CdS solar cells |
Solar energy materials 17 (4), 279-287 , 1988 |
1988 |
| Effects of argon partial pressure and hydrogen admixtures on the properties of sputtered CuInSe2 thin films |
Applied Surface Science 33, 844-853 , 1988 |
1988 |
| Capacitance characterisation of Cu2S/CdS heterojunctions |
Semiconductor science and technology 3 (8), 781 , 1988 |
1988 |
| CuInSe 2 thin films produced by rf sputtering in Ar/H 2 atmospheres |
Journal of applied physics 62 (10), 4163-4169 , 1987 |
1987 |
| Thin CuxS sputtered films in Ar/H2 atmospheres |
Vacuum 37 (5-6), 437-439 , 1987 |
1987 |
| Sputtering process of Cu2S in an Ar atmosphere |
Vacuum 37 (5-6), 433-436 , 1987 |
1987 |
| R.F. Sputtered CuInSe 2 Thin Films in Ar/H 2 Atmospheres |
Seventh EC Photovoltaic Solar Energy Conference: Proceedings of the … , 1987 |
1987 |
| Role of defects in the annealing behaviour of RF sputtered CdS films |
Phys. Status Solidi A;(German Democratic Republic) 94 (2) , 1986 |
1986 |
| Heat treatment of rf sputtered CdS films for solar cell applications |
Solar Energy Materials 12 (5), 345-352 , 1985 |
1985 |
| INFLUENCE OF HYDROGEN ON PHOTOVOLTAIC THIN Cu//xS SPUTTERED FILMS. |
Commission of the European Communities,(Report) EUR, 871-873 , 1985 |
1985 |
| Structural and optical properties of rf-sputtered CdS thin films |
Thin Solid Films 120 (1), 31-36 , 1984 |
1984 |
| Temperature and bias effects on the electrical properties of CdS thin films prepared by rf sputtering |
Thin Solid Films 114 (4), 327-334 , 1984 |
1984 |
| Electrical transport properties of polycrystalline rf sputtered CdS thin films |
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2 (4 … , 1984 |
1984 |
| Propiedades eléctricas de películas delgadas de CdS producidas por pulverización RF |
PQDT-Global , 1984 |
1984 |
| Influence of the sputtering gas pressure on deposition profiles |
J. Vac. Sci. Technol. A 1 (3) , 1983 |
1983 |
| Deposition dependence of rf-sputtered CdS films |
Thin Solid Films 90 (3), 253-257 , 1982 |
1982 |
| Resistividad de películas delgadas de CdS producidas por pulverización R. F, dependencia con las condiciones de producción |
III Reunión Grupo Especializado de Electricidad y Magnetismo de la RSEF … , 1981 |
1981 |
